FGA20N120FTD Datasheet PDF - Fairchild Semiconductor
| Part Number | FGA20N120FTD | |
| Description | 20A Trench IGBT | |
| Manufacturers | Fairchild Semiconductor | |
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FGA20N120FTD
1200V, 20A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: VCE(sat) =1.6V @ IC = 20A
• High input impedance
• RoHS compliant
Applications
• Induction heating and Microvewave oven
• Soft switching applications
December 2007
tm
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
C
GCE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating, Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2007 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. A
1
G
E
Ratings
1200
± 25
40
20
60
20
298
119
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.42
2.0
40
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/
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Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
4
20A
40A
IC = 10A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 200V
600V
9
400V
6
3
0
0 30 60 90 120 150
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
300
100
tr
10
0
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
20 40 60 80
Gate Resistance, RG [Ω]
100
Figure 8. Capacitance Characteristics
5000
4000
Common Emitter
Cies VGE = 0V, f = 1MHz
TC = 25oC
3000
2000
1000
0
1
Coes
Cres
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
100
10µs
10 100µs
1ms
1 10 ms
DC
*Notes:
0.1 1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1
10 100 1000 2000
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
2000
1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
td(off)
tf
100
70
0
20 40 60 80
Gate Resistance, RG [Ω]
100
FGA20N120FTD Rev. A
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/
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| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
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