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Datasheet TTA1943 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | TTA1943 | Transistor Silicon PNP Epitaxial Type TTA1943
TOSHIBA Transistor Silicon PNP Epitaxial Type
TTA1943
Power Amplifier Applications
• • • High collector voltage: VCEO = -230 V (min) Complementary to TTC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Cha | Toshiba | transistor |
2 | TTA1943 | Silicon PNP triple diffusion planar transistor SEMICONDUCTOR
TTA1943
Silicon PNP triple diffusion planar transistor -15A/-230V/150W
RoHS RoHS
Nell High Power Products
20.00±0.20 18.00
ø3.30 ± 0.20
5.00
3.00
2.00 9.00
4.00
6.00 20.50 26.00
TO-3PL
3.00 2.50 (typ.)
FEATURES
High-speed switching High collector-emitter voltage: VCEO = -2 | nELL | transistor |
TTA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | TTA0001 | Transistor Silicon PNP Triple Diffused Type TTA0001
TOSHIBA Transistor Silicon PNP Triple Diffused Type
TTA0001
○ Power Amplifier Applications
• • • High collector voltage: VCEO = -160 V (min.) Complementary to TTC0001 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Unit: mm
Absolute Maximum Ratings (Tc Toshiba Semiconductor transistor | | |
2 | TTA0002 | Transistor Silicon PNP Triple Diffused Type TTA0002
TOSHIBA Transistor Silicon PNP Triple Diffused Type
TTA0002
○ Power Amplifier Applications
• • • High collector voltage: VCEO = -160 V (min) Complementary to TTC0002 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Unit: mm
Absolute Maximum Ratings (Tc Toshiba Semiconductor transistor | | |
3 | TTA007 | Silicon PNP Epitaxial Type TTA007
TOSHIBA Transistor Silicon PNP Epitaxial Type
TTA007
High-Speed Switching Applications DC-DC Converter Applications
• • • High DC current gain : hFE = 200 to 500 (IC = −0.1 A) Low collector-emitter saturation voltage : VCE(sat) = −0.2 V (max) High-speed switching : tf = 70 ns (typ. Toshiba Semiconductor data | | |
4 | TTA1586FU | Audio Frequency General Purpose Amplifier Applications TTA1586FU
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
TTA1586FU
Audio Frequency General Purpose Amplifier Applications
• • • • • • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 Toshiba Semiconductor amplifier | | |
5 | TTA1943 | Transistor Silicon PNP Epitaxial Type TTA1943
TOSHIBA Transistor Silicon PNP Epitaxial Type
TTA1943
Power Amplifier Applications
• • • High collector voltage: VCEO = -230 V (min) Complementary to TTC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Cha Toshiba transistor | | |
6 | TTA1943 | Silicon PNP triple diffusion planar transistor SEMICONDUCTOR
TTA1943
Silicon PNP triple diffusion planar transistor -15A/-230V/150W
RoHS RoHS
Nell High Power Products
20.00±0.20 18.00
ø3.30 ± 0.20
5.00
3.00
2.00 9.00
4.00
6.00 20.50 26.00
TO-3PL
3.00 2.50 (typ.)
FEATURES
High-speed switching High collector-emitter voltage: VCEO = -2 nELL transistor | |
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Número de pieza | Descripción | Fabricantes | |
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