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PDF 20NE06L Data sheet ( Hoja de datos )
| Número de pieza | 20NE06L | |
| Descripción | STB20NE06L | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 20NE06L (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® STB20NE06L
N - CHANNEL 60V - 0.06Ω - 20A TO-263
STripFET™ POWER MOSFET
TYPE
V DSS
RDS(on)
ID
STB20NE06L
60 V
< 0.07 Ω
20 A
s TYPICAL RDS(on) = 0.06 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s LOW THRESHOLD DRIVE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique ”Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM (•)
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
Va l u e
Un it
60 V
60 V
± 20
V
20 A
14 A
80 A
70
0.47
W
W /o C
7 V/ns
-65 to 175
oC
175 oC
( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
Free Datasheet http://www.datasheet4u.net/
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STB20NE06L
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
Free Datasheet http://www.datasheet4u.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 20NE06L.PDF ] | |
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