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B140NF75 PDF Datasheet - STMicroelectronics

Part Number B140NF75
Description STB140NF75
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 
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B140NF75 datasheet, circuit
STP140NF75
STB140NF75 - STB140NF75-1
N-channel 75V - 0.0065- 120A - D2PAK/I2/TO-220
STripFET™ III Power MOSFET
General features
Type
STB140NF75
STB140NF75-1
STP140NF75
VDSS
75V
75V
75V
RDS(on)
<0.0075
<0.0075
<0.0075
1. Current limited by package
100% avalanche tested
ID
120A(1)
120A(1)
120A(1)
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
3
2
1
TO-220
3
1
D2PAK
123
I2PAK
Internal schematic diagram
Order codes
Part number
STB140NF75T4
STB140NF75-1
STP140NF75
Marking
B140NF75
B140NF75
P140NF75
Package
D2PAK
I2PAK
TO-220
Packaging
Tape & reel
Tube
Tube
June 2006
Rev 4
1/18
www.st.com
18
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1 page
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B140NF75 pdf, schematic
Contents
Contents
STB140NF75 - STP140NF75-1 - STP140NF75
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
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B140NF75 equivalent
STB140NF75 - STP140NF75-1 - STP140NF75
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 120A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120A,
di/dt = 100A/µs,
VDD = 35V, Tj = 150°C
(see Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
120 A
480 A
1.5 V
115 ns
450 nC
8A
5/18
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5 Page
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B140NF75 diode, scr
STB140NF75 - STP140NF75-1 - STP140NF75
Figure 17. Allowable lav vs time in avalanche
Electrical characteristics
The previous curve gives the safe operating area for unclamped inductive loads, single
pulse or repetitive, under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the allowable current in avalanche
PD(AVE) is the average power dissipation in avalanche (single pulse)
tAV is the time in avalanche
To derate above 25 °C, at fixed IAV , the following equation must be applied:
IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from normalized thermal response at fixed pulse width
equal to TAV .
9/18
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Information Total 18 Pages
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