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PDF IRF260 Data sheet ( Hoja de datos )
| Número de pieza | IRF260 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Nell | |
| Logotipo |  |
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SEMICONDUCTOR
IRF260 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
50A, 200Volts
DESCRIPTION
The Nell IRF260 is a three-terminal silicon device
with current conduction capability of 50A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 200V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as
switched mode power supplies, DC to DC converters,
motor control circuits, UPS and general purpose
switching applications.
D
G
D
S
TO-3PB
(IRF260B)
GD S
TO-247AB
(IRF260C)
FEATURES
RDS(ON) = 0.055Ω @ VGS = 10V
Ultra low gate charge(230nC Max.)
Low reverse transfer capacitance
(CRSS = 310pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
50
200
0.055 @ VGS = 10V
230
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current (VGS=10V)
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=50A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
lAS=50A, L=0.7mH
dv/dt
Peak diode recovery dv/dt(Note 3)
VALUE
200
200
±20
50
35
200
50
28
1000
5.0
UNIT
V
A
mJ
V /ns
Total power dissipation
PD
Derate above 25°C
TC=25°C
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.lAS=50A, L=0.7mH, VDD=50V, RG =25Ω, starting TJ =25°C.
3.ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, starting TJ < 150°C.
280 W
2.2 W /°C
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
www.nellsemi.com
Page 1 of 7
1 page  
SEMICONDUCTOR
IRF260 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum effective transient thermal impedance,
Junction-to-Case
1
D ~ 0.5
0.1
10-2
0.2
0.1
0.05
0.02
0.01
Single pulse
(Thermal response)
10-3
10-5
10-4
10-3
102
PDM
t1
t2
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
0.1 1 10
Rectangular pulse duration, t1 (S)
Fig.11a. Switching time test circuit
VDS
VGS
RG
RD
D.U.T.
10V
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
+
- VDD
Fig.11b. Switching time waveforms
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
VDS
L
RG
10V
tP
D.U.T.
lAS
0.01Ω
+
- VDD
A
Vary tp to obtain required IAS
BVDSS
lAS
VDD
lD(t)
tp
VDS(t)
Time
www.nellsemi.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF260.PDF ] | |
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