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ME60N03A Datasheet PDF - Matsuki

Part Number ME60N03A
Description 25V N-Channel Enhancement Mode MOSFET
Manufacturers Matsuki 
Logo Matsuki Logo 

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25V N-Channel Enhancement Mode MOSFET
VDS=25V
RDS(ON), Vgs@10V,Ids@30A = 8.5m
RDS(ON), Vgs@4.5V,Ids@30A =13m
FEATURES
Advanced trench process technology
High density cell design for ultra low on-resistance
Specially designed for DC/DC converters and motor drivers
Fully characterized avalanche voltage and current
PIN CONFIGURATION
(TO-252)
Top View
ME60N03A
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse(L=0.5mH,Rg=25 )
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
EAS
RθJA
RθJC
Limit
25
±20
50
100
50
23
-55 to 150
110
Steady State
20
15
40
Unit
V
V
A
A
W
Apr, 2007 – Version 4.1
01Free Datasheet http://www.datasheet4u.net/

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ME60N03A equivalent
25V N-Channel Enhancement Mode MOSFET
ME60N03A
TO-252 Package Outline
Apr, 2007 – Version 4.1
05Free Datasheet http://www.datasheet4u.net/


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ME60N03A datasheet mosfet


1. PDF - 25V N-Ch MOSFET

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