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PDF FDA59N25 Data sheet ( Hoja de datos )
| Número de pieza | FDA59N25 | |
| Descripción | 250V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDA59N25
N-Channel UniFETTM MOSFET
250 V, 59 A, 49 mΩ
Features
• RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A
• Low Gate Charge (Typ. 63 nC)
• Low Crss (Typ. 70 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
April 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-3PN
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
Drain to Source Voltage
VDS(Avalanche) Repetitive Avalanche Voltage
VGSS
ID
Gate to Source Voltage
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
IDM Drain Current
- Pulsed
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1,2)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
©2005 Fairchild Semiconductor Corporation
FDA59N25 Rev. C2
1
FDA59N25
250
300
±30
59
35
236
1458
59
39.2
4.5
392
3.2
-55 to +150
300
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDA59N25
0.32
0.24
40
Unit
oC/W
www.fairchildsemi.com
1 page  
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
10V
tp
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2005 Fairchild Semiconductor Corporation
FDA59N25 Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDA59N25.PDF ] | |
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