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What is CS2N60F?

This electronic component, produced by the manufacturer "HUAJING", performs the same function as "Silicon N-Channel Power MOSFET".


CS2N60F Datasheet PDF - HUAJING

Part Number CS2N60F
Description Silicon N-Channel Power MOSFET
Manufacturers HUAJING 
Logo HUAJING Logo 


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Huajing Discrete Devices
Silicon N-Channel Power MOSFET
General Description
CS2N60F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard..
Features
l Fast Switching
l Low ON Resistance(Rdson4.5)
l Low Gate Charge (Typical Data:8.5nC)
l Low Reverse transfer capacitances(Typical:5.4pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
VDSS
ID
PD (TC=25)
RDS(ON)Typ
R
CS2N60F A9H
600 V
2A
24 W
3.6
Symbol
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
Rating
600
2.0
1.45
8.0
±30
80
6.4
1.1
5
24
0.192
15055 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012
Free
Datas

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CS2N60F equivalent
Huajing Discrete Devices
R CS2N60F A9H
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
10
1
1.00E-05
1.00E-04
6
PULSE DURATION = 10μs
5 DUTY CYCLE = 0.5%MAX
VDS=30V
4
1.00E-03
1.00E-02
t Pulse Width , Seconds
1.00E-01
Figure 6 Maximun Peak Current Capability
8
6
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
ID=2A
ID=1A
3
2 +150
ID=0.5A
ID=0.25A
4
+25
1
-55
0
2345
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
8
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
7
2
6 4 6 8 10 12 14
Vgs , Gate to Source Voltage , Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=1A
1.75
6 1.5
VGS=20V
1.25
51
0.75
4
0123
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
4
0.5
-50
Figure
0 50 100 150
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2012
Free Datasheet http://www.datasheet4u.com/


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CS2N60F datasheet


1. - 600V, N-Channel Power MOSFET

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