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K3911 Datasheet PDF - Toshiba

Part Number K3911
Description Field Effect Transistor
Manufacturers Toshiba 
Logo Toshiba Logo 

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K3911 datasheet, circuit
2SK3911
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI)
2SK3911
Switching Regulator Applications
Unit: mm
Small gate charge: Qg = 60 nC (typ.)
Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.)
High forward transfer admittance: |Yfs| = 11 S (typ.)
Low leakage current: IDSS = 500 μA (VDS = 600 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
20
80
150
792
20
15
150
-55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. Gate
2. Drain (heatsink)
3. Source
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.46 mH, IAR = 20 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-08
Free Datasheet http://www.datasheet4u.com/

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K3911 equivalent
2SK3911
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
10μ
100μ
1
10
PDM
t
T
100
Duty = t/T
Rth (ch-c) = 0.833°C/W
1 10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
1000
100 ID max (PULSE) *
100 μs *
ID max (CONTINUOUS)
10
1 ms *
DC OPERATION
Tc=25
1
0.1
*: SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly
with increase in temperature
0.01
1
10
VDSS max
100
1000
DRAINSOURCE VOLTAGE VDS (V)
EAS – Tch
1000
800
600
400
200
0
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
RG = 25 Ω
VDD = 90 V, L = 3.46 mH
WAVE FORM
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5 2006-11-08
Free Datasheet http://www.datasheet4u.com/

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Information Total 6 Pages
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