|
|
Datasheet 2SD468 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SD468 | Silicon NPN Epitaxial 2SD468
Silicon NPN Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SB562
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
2SD468
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Co |  Hitachi Semiconductor | transistor |
| 2 | 2SD468 | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SD468
NPN SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
FEATURES
* Low frequency power amplifier * Complement to 2SB562
1 TO-92
1 TO-92NL
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
2SD468-x-T92-B
2SD468L-x-T92-B
2SD468-x-T92-K
|  Unisonic Technologies | transistor |
| 3 | 2SD468 | Silicon NPN Epitaxial 2SD468
Silicon NPN Epitaxial
REJ03G0766-0200 (Previous ADE-208-1135) Rev.2.00 Aug.10.2005
Application
• Low frequency power amplifier • Complementary pair with 2SB562
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
1. Emitter 2. Collector 3. Base
3 2
www.DataSheet.co.kr
|  Renesas | transistor |
| 4 | 2SD468 | NPN Epitaxial Silicon Transistor MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
2SD468
Features
x x Low Frequency Power Amplifier. Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering informatio |  MCC | transistor |
| 5 | 2SD468 | NPN Silicon Epitaxial Planar Transistor ST 2SD468
NPN Silicon Epitaxial Planar Transistor Low Frequency Power amplifier applications. The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weigh |  SEMTECH | transistor |
2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SD0592A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter saturation voltage V  Panasonic Semiconductor transistor | | |
| 2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac Panasonic Semiconductor transistor | | |
| 3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a Panasonic Semiconductor transistor | | |
| 4 | 2SD0602 | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 5 | 2SD0602A | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 6 | 2SD0638 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitt Panasonic Semiconductor transistor | | |
| 7 | 2SD0662 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | |
| Esta página es del resultado de búsqueda del 2SD468. Si pulsa el resultado de búsqueda de 2SD468 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |