P2803NVG Datasheet PDF - NIKO-SEM
Part Number | P2803NVG | |
Description | N- & P-Channel Enhancement Mode Field Effect Transistor | |
Manufacturers | NIKO-SEM | |
Logo | ||
There is a preview and P2803NVG download ( pdf file ) link at the bottom of this page. Total 9 Pages |
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N- & P-Channel Enhancement Mode
Field Effect Transistor
P2803NVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
N-Channel 30
P-Channel -30
RDS(ON)
27.5m
34m
ID
7A
-6A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
7 -6
6 -5 A
20 -20
2
W
1.3
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
MAXIMUM
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
N-Ch 1
P-Ch -1
N-Ch
P-Ch
1.5 2.5
-1.5 -2.5
V
±100
nA
±100
1 JUL-25-2005
Free Datasheet http://www.datasheet4u.com/
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NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2803NVG
SOP-8
Lead-Free
5 JUL-25-2005
Free Datasheet http://www.datasheet4u.com/
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P2803NVG electronic component. |
Information | Total 9 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ P2803NVG.PDF Datasheet ] |
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