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PDF SUD40N08-16 Data sheet ( Hoja de datos )

Número de pieza SUD40N08-16
Descripción N-Channel MOSFET
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SUD40N08-16
N-Channel
80 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
80 0.016 @ VGS = 10 V
TO-252
ID (A)
40
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD40N08-16
SUD40N08-16—E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
IAR
EAR
PD
TJ, Tstg
80
"20
40
30
60
40
40
80
136b
3a
55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
t v 10 sec
Steady State
Symbol
RthJA
RthJC
1/5
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
_C/W
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SUD40N08-16 pdf
SUD40N08-16
N-Channel
80 V (D-S) 175 °C MOSFET
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