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AWT6112 PDF Datasheet - Power Amplifier Module - ANADIGICS

Part Number AWT6112
Description Power Amplifier Module
Manufacturers ANADIGICS 
Logo ANADIGICS Logo 
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AWT6112 datasheet, circuit
FEATURES
• InGaP HBT Technology
• High Efficiency: 54% AMPS, 38% CDMA
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <5 µA
• Optimized for a 50 System
• Low Profile Surface Mount Package: 1.56mm Max
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant
• RoHS Compliant Package Option, 250 oC MSL-3
AWT6112
Cellular Dual Mode AMPS/CDMA
3.4V/28dBm Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.6
APPLICATIONS
• Single Mode CDMA Wireless Handsets
• Dual Mode AMPS/CDMA Wireless Handsets
M7 Package
10 Pin 4 mm x 4 mm x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6112 is a high power, high efficiency
amplifier module for dual mode AMPS/CDMA
wireless handset applications. The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different
output power levels, and a shutdown mode with low
leakage current, serve to increase handset talk and
standby time. The self contained 4 mm x 4 mm x 1.5 mm
surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50 system.
GND at slug (pad)
VREF 1
10 GND
VMODE 2
Bias Control
9 GND
GND 3
8 RFOUT
RFIN 4
7 GND
VCC 5
6 VCC
Figure 1: Block Diagram
06/2005
Free Datasheet http://www.datasheet4u.com/

1 page

AWT6112 pdf, schematic
AWT6112
VREF 1
VMODE 2
GND
10 GND
9 GND
GND 3
8 RFOUT
RFIN 4
7 GND
VCC 5
6 VCC
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN NAME DESCRIPTION
1 VREF Reference Voltage
2 VMODE Mode Control
3 GND Ground
4
RFIN
RF Input
5 VCC Supply Voltage
6 VCC Supply Voltage
7 GND Ground
8 RFOUT RF Output
9 GND Ground
10 GND Ground
2 PRELIMINARY DATA SHEET - Rev 1.6
06/2005
Free Datasheet http://www.datasheet4u.com/

2 Page

AWT6112 equivalent
Table 5: Electrical Specifications - CDMA Operation
(TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, 50 system)
AWT6112
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Gain
26 27.5 30
24 26.5 28
Adjacent Channel Power
at 6885 kHz offset (1)
Primary Channel BW = 1.23 MHZ - -49 -47
Adjacent Channel BW = 30 kHz
- -48 -46
Adjacent Channel Power
at 61.98 MHz offset
Primary Channel BW = 1.23 MHZ - -58 -56
Adjacent Channel BW = 30 kHz
- -68 -57
Power-Added Efficiency (1)
37 38.5
8 8.5
-
-
Quiescent Current (Icq)
-
78 95
49 60
dB
POUT < +28 dBm, VMODE = 0 V
POUT < +16 dBm, VMODE = 2.85 V
dB
POUT < +28 dBm, VMODE = 0 V
POUT < +16 dBm, VMODE = 2.85 V
dB
POUT < +28 dBm, VMODE = 0 V
POUT < +16 dBm, VMODE = 2.85 V
%
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.85 V
mA
VMODE = 0 V
VMODE = +2.85 V
Reference Current
- 2.3 4.0 mA through VREF pin
Mode Control Current
- 0.35 0.7
mA through VMODE pin,
Leakage Current
- <1 5
mA
VCC = +4.2 V, VREF = 0 V,
VMODE = 0 V
Noise in Receive Band
- -135 -132 dBm/Hz 869 MHz to 894 MHz
Harmonics
2fo
3fo, 4fo
-
-
-45 -30
-55 -30
dBc
Input Impedance
- - 2:1 VSWR
Spurious Output Level
(all spurious outputs)
POUT < +28 dBm
In-band load VSWR < 8:1
- - -65 dBc Out-of-band load VSWR < 8:1
Applies over all voltage and
temperature operating ranges
Load mismatch stress with no
permanent degradation or failure
8:1
Notes:
(1) PAE and ACP limit applies at 836.5 MHz.
-
VCC = +5.0 V, PIN = +5 dBm
- VSWR Applies over full operating
temperature range
PRELIMINARY DATA SHEET - Rev 1.6
06/2005
5
Free Datasheet http://www.datasheet4u.com/

5 Page

AWT6112 diode, scr
PACKAGE OUTLINE
AWT6112
Figure 12: M7 Package Outline - 10 Pin 4mm x 4mm Surface Mount Module
AWT6112
2
BBBB
Figure 13: Branding Specification
PRELIMINARY DATA SHEET - Rev 1.6
06/2005
9
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9 Page





Information Total 12 Pages
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