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2SK1948 PDF Datasheet - Renesas

Part Number 2SK1948
Description Silicon N Channel MOS FET
Manufacturers Renesas 
Logo Renesas Logo 
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2SK1948 datasheet, circuit
2SK1957
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter, motor control
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
G
12 3
REJ03G0988-0200
(Previous: ADE-208-1336)
Rev.2.00
Sep 07, 2005
D
1. Gate
2. Drain
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 page
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2SK1948 pdf, schematic
2SK1957
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Ratings
200
±20
7
28
7
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
200
±20
2.0
3.0
Typ
0.33
4.5
700
260
45
20
45
50
35
1.1
150
Max
±10
250
4.0
0.45
Unit
V
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS =160 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V*3
S ID = 4 A, VDS = 10 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 4 A, VGS = 10 V,
ns RL = 7.5
ns
ns
V IF = 7 A, VGS = 0
ns IF = 7 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
Free Datasheet http://www.datasheet4u.com/

2 Page
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2SK1948 equivalent
2SK1957
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8
6
4 VGS = 10 V
2
0, –5 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0 D = 1
0.5
0.3 0.2
0.1
0.1
0.05
0.02
0.03
1
0.01
Shot
Pulse
0.01
10 µ 100 µ
TC = 25°C
θch–c (t) = γS (t) • θch–c
θch–c = 4.17°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout Monitor
RL
Vin
10 V
50
VDD =.. 30 V
Waveforms
90%
Vin 10%
Vout 10%
td (on)
90%
tr
90%
td (off)
10%
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
Free Datasheet http://www.datasheet4u.com/

5 Page





Information Total 7 Pages
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