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2SK1947 PDF Datasheet - Renesas

Part Number 2SK1947
Description Silicon N Channel MOS FET
Manufacturers Renesas 
Logo Renesas Logo 
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2SK1947 datasheet, circuit
2SK1947
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (trr = 140 ns)
Suitable for switching regulator, motor control
Outline
REJ03G0986-0200
(Previous: ADE-208-1334)
Rev.2.00
Sep 07, 2005
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
1
2
3
G
S
1. Gate
2. Drain
(Flange)
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 page
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2SK1947 pdf, schematic
2SK1947
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Ratings
250
±30
50
200
50
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
250
±30
2.0
20
Typ
0.047
30
5810
2360
270
75
270
420
200
1.2
140
Max
±10
250
3.0
0.06
Unit
V
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A, VGS = 10 V*3
S ID = 25 A, VDS = 10 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 25 A, VGS = 10 V,
ns RL = 1.2
ns
ns
V IF = 50 A, VGS = 0
ns IF = 50 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
Free Datasheet http://www.datasheet4u.com/

2 Page
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2SK1947 equivalent
2SK1947
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
30
20 VGS = 10 V
10
0, –5 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
0.3 0.2
0.1
0.1 0.05
0.02
0.03 0.01
1 Shot Pulse
0.01
10 µ
100 µ
TC = 25°C
1 m 10 m
Pulse Width PW (S)
θch–c (t) = γS (t) · θch–c
θch–c = 0.625°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
100 m
1
10
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50
D.U.T.
Vout Monitor
RL
VDD =.. 30 V
Waveforms
90%
Vin 10%
Vout 10%
td (on)
90%
tr
90%
td (off)
10%
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
Free Datasheet http://www.datasheet4u.com/

5 Page





Information Total 7 Pages
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