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Número de pieza | AOI516 | |
Descripción | 30V N-Channel AlphaMOS | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOI516 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOD516/AOI516/AOY516
30V N-Channel AlphaMOS
General Description
• Latest Trench Power MOSFET technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
50A
< 5mΩ
< 9mΩ
Application
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
TopView
TO252
DPAK
Bottom View
TO-251A IPAK
TO251B (IPAK short lead)
Top View
Bottom View
DD
DS
G
DG
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
50
39
170
18
14
29
42
36
50
25
2.5
1.6
-55 to 175
G
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16
41
2.5
Max
20
50
3
G
D
S
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 3: Nov 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
1000
TA=25°C
100
10
1
1E-05
0.001
0.1
10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 3: Nov 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOI516.PDF ] |
Número de pieza | Descripción | Fabricantes |
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AOI510 | 30V N-Channel AlphaMOS | Alpha & Omega Semiconductors |
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AOI516 | 30V N-Channel AlphaMOS | Freescale |
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