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What is AUIRFR5305?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "AUTOMOTIVE MOSFET".


AUIRFR5305 Datasheet PDF - International Rectifier

Part Number AUIRFR5305
Description AUTOMOTIVE MOSFET
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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Total 13 Pages



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No Preview Available ! AUIRFR5305 datasheet, circuit

AUTOMOTIVE MOSFET
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D
G
S
D
PD-96341
AUIRFR5305
AUIRFU5305
HEXFET® Power MOSFET
V(BR)DSS
-55V
RDS(on) max. 0.065
ID -31A
D
Description
Specifically designed for Automotive applications, this Cellular
Planar design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
S
D
G
D-Pak
AUIRFR5305
S
D
G
I-Pak
AUIRFU5305
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
™hPulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dhSingle Pulse Avalanche Energy (Thermally limited)
ÙhAvalanche Current
™Repetitive Avalanche Energy
ÃehPeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB mount) ∗∗
RθJA Junction-to-Ambient ***
Max.
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/06/10
Free Datasheet http://www.datasheet4u.com/

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AUIRFR5305 equivalent
2500
2000
1500
Ciss
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
1000
500
Crss
0A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
TJ = 175°C
TJ = 25°C
10
0.4
VGS = 0V A
0.8 1.2 1.6 2.0
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
AUIRFR/U5305
20 ID = -16A
16
VDS = -44V
VDS = -28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40 50 60
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100µs
10
1ms
TTCJ
= 25°C
= 175°C
Single Pulse
1
10ms
A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
Free Datasheet http://www.datasheet4u.com/


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AUIRFR5305 electronic component.


Information Total 13 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
AUIRFR5305The function is Power MOSFET ( Transistor ). InfineonInfineon
AUIRFR5305The function is AUTOMOTIVE MOSFET. International RectifierInternational Rectifier

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