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What is GT30J126?

This electronic component, produced by the manufacturer "Toshiba", performs the same function as "Silicon N-Channel IGBT".


GT30J126 Datasheet PDF - Toshiba

Part Number GT30J126
Description Silicon N-Channel IGBT
Manufacturers Toshiba 
Logo Toshiba Logo 


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GT30J126
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J126
High Power Switching Applications
Fast Switching Applications
Unit: mm
Fourth-generation IGBT
Enhancement mode type
Fast switching (FS):
High speed: tf = 0.05 μs (typ.)
Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
Low saturation voltage: VCE (sat) = 1.95 V (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
VCES
VGES
IC
ICP
PC
Tj
Tstg
600
±20
30
60
90
150
55 to 150
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
Rth (j-c)
Max Unit
1.39 °C/W
Marking
TOSHIBA
GT30J126
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead (Pb)-Free
1
2008-07-29
Free Datasheet http://www.datasheet4u.com/

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GT30J126 equivalent
10000
3000
1000
C – VCE
Cies
300
100
Common emitter
VGE = 0
30 f = 1 MHz
Tc = 25°C
10
0.1 0.3
1
3
Coes
Cres
10 30 100 300 1000
Collector-emitter voltage VCE (V)
GT30J126
500
Common emitter
RL = 10
Tc = 25°C
400
VCE, VGE – QG
20
16
300
200
300
200
VCE = 100 V
100
12
8
4
00
0 40 80 120 160 200
Gate charge QG (nC)
Safe Operating Area
100
IC max (pulsed)*
30 IC max (continuous)
50 μs*
10
DC operation
3
*: Single pulse
1 Tc = 25°C
Curves must be
0.3 derated linearly
with increase in
temperature.
0.1
13
10
1 ms*
10 ms*
100 μs*
30 100 300
Collector-emitter voltage VCE (V)
1000
Reverse Bias SOA
100
30
10
3
1
0.3 Tj 125°C
VGE = 15 V
0.1 RG = 24
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
rth (t) – tw
102
101
100
101
102
103
104
105
104
103
102
101
Tc = 25°C
100 101
102
Pulse width tw (s)
5
2008-07-29
Free Datasheet http://www.datasheet4u.com/


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