|
|
PDF BSB017N03LX3G Data sheet ( Hoja de datos )
| Número de pieza | BSB017N03LX3G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BSB017N03LX3G (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
BSB017N03LX3 G
OptiMOSTM3 Power-MOSFET
Features
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R DS(on)
• Excellent gate charge x R DS(on) product (FOM)
Product Summary
V DS
R DS(on),max
ID
30 V
1.7 mΩ
147 A
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
CanPAKTM M
MG-WDSON-2
• 100% Rg Tested
• Double-sided cooling
• Pb-free plating; RoHS compliant
• Compatible with DirectFET® package MX footprint and outline 1)
• Qualified according to JEDEC2) for target applications
Type
BSB017N03LX3 G
Package
MG-WDSON-2
Outline
MX
Marking
1103
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
ID
I D,pulse
I AS
E AS
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=10 V, T A=25 °C,
R thJA=45 K/W2)
T C=25 °C
T C=25 °C
I D=40 A, R GS=25 Ω
147 A
93
32
400
40
225 mJ
±20 V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.0
page 1
2009-05-11
Free Datasheet http://www.datasheet4u.com/
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
800
BSB017N03LX3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
6
720
640
560
480
10 V
400
5V
4.5 V
4V
5
4
3.2 V
3
3.5 V
320
240
160
80
0
0
12
V DS [V]
3.5 V
3.2 V
3V
2.8 V
3
4V
2
4.5 V
5V
10 V
7V
1
0
0 10 20 30 40 50
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
400
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
400
360
320 320
280
240 240
200
160 160
120
80
0
0
150 °C
25 °C
1234
V GS [V]
5
80
40
0
0
40 80 120
I D [A]
160
Rev. 2.0
page 5
2009-05-11
Free Datasheet http://www.datasheet4u.com/
5 Page 
BSB017N03LX3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 11
2009-05-11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BSB017N03LX3G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BSB017N03LX3G | Power MOSFET ( Transistor ) | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |