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PDF MPSA42 Data sheet ( Hoja de datos )
| Número de pieza | MPSA42 | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
MPSA42
NPN Plastic Encapsulated Transistor
FEATURES
High Voltage NPN Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Emitter
Base
Collector
GH
J
AD
B
K
E CF
TO-92
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Thermal Resistance, junction to Ambinet
Thermal Resistance, junction to Case
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
RθJA
RθJC
300
300
5
0.5
625
150, -55~150
200
83.3
UNIT
V
V
V
A
mW
°C
°C/ mW
°C/ mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
V(BR)CBO
300
-
-
V IC=100μA, IE = 0A
V(BR)CEO
300
-
-
V IC=1mA, IB = 0A
V(BR)EBO
5
-
-
V IE=100μA, IC = 0A
ICBO
-
-
0.25
μA VCB=200 V, IE = 0 A
IEBO - - 0.1 μA VEB=5 V, IC =0 mA
hFE(1)
60 -
-
VCE=10V, IC=1mA
hFE(2)
80 - 250
VCE=10V, IC=10mA
hFE(3)
75 -
-
VCE=10V, IC=30mA
VCE(sat) - - 0.2 V IC=20mA, IB=2mA
VBE(sat) - - 0.9 V IC=20mA, IB=2mA
fT
50 -
- MHz VCE = 20V, IC = 10mA, f=30MHz
CLASSIFICATION OF hFE(2)
Rank
A
Range
80-100
http://www.SeCoSGmbH.com/
02-Apr-2010 Rev. A
B1
100-150
B2
150-200
C
200-250
Any changes of specification will not be informed individually.
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