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NPN Silicon General Purpose Transistors
MPSA42
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
TJ, Tstg
Junction and Storage Temperature
RӨJA
Thermal Resistance, junction to Ambient
RӨJC
Thermal Resistance, unction to Case
Value
310
305
5
500
-55-150
200
83.3
Units
V
V
V
mA
℃
℃/mW
℃/mW
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
Ic=100uA, IE=0
Ic=1mA, IB=0
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
IE=100µA, IC=0
VCB=200V, IE=0
VEB=5V, IC=0
DC current gain
Collector-emitter saturation voltage
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
IC=20mA, IB=2mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=20mA, IB=2mA
VCE=20V, IC=10mA,f=30MHZ
specified)
MIN
310
305
5
60
80
75
50
TYP
MAX
0.25
0.1
UNIT
V
V
V
µA
µA
250
0.2 V
0.9 V
MHz
CLASSIFICATION OF hFE(2)
Rank
A
Range
80-100
B1
100-150
B2
150-200
C
200-250
WEITRON
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