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Datasheet 2N7002K Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12N7002KN-Channel Enhanceent Mode Field Effect Transistor

SMD Type MOSFET N-Channel Enhanceent Mode Field Effect Transistor 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Ma
Kexin
Kexin		transistor
22N7002KN-Channel MOSFET

Plastic-Encapsulate Mosfets FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VDS VDGR VGS ID IDM (1) PTOT Rthj- amb Parameter Drain-source volt
HOTTECH
HOTTECH		mosfet
32N7002KN-Channel MOSFET

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Voltage
MCC
MCC		mosfet
42N7002KN-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead(Pb)-Free 1 GATE * Description: * Gate Pretection Diode SOURCE 2 The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extr nt and cost-e ectiveness device. The 2N7002K is universally used for
WEITRON
WEITRON		mosfet
52N7002KN-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 60V RDS(ON) max 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power
Diodes Incorporated
Diodes Incorporated		mosfet


2N7 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12N70N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. T
Unisonic Technologies
Unisonic Technologies		mosfet
22N70-MN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characterist
Unisonic Technologies
Unisonic Technologies		mosfet
32N7000N-CHANNEL MOSFET

2N7000 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-92 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-92 Plastic Package. 特征 / Features 灵敏的控制级触发电流和很低的维持电流。 Sensitive gate trigger current and Low Holding current. 用途 / Applic
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS		mosfet
42N7000Small Signal MOSFET

2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain Source Voltage Drain-Gate Voltage (RGS = 1 MΩ) Gate-source Voltage Drain Current Continuous Non-repetitive ( tp ≤ 50 �
SEMTECH
SEMTECH		mosfet
52N7000N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Vol
KEC
KEC		transistor
62N7000Small Signal MOSFET

WEITRON Small Signal MOSFET N-Channel 3 DRAIN Features: *Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns 2 GATE 1 SOURCE 2N7000 TO-92 1. SOURCE 2. GATE 3. DRAIN 1 2 3 Maximum Ratings (TA=25 C Unless
WEITRON
WEITRON		mosfet
72N7000N-Channel Enhancement Mode Power MosFET

Elektronische Bauelemente 2N7000 200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. D SEATING PLANE b1 TO-92 E S1
SeCoS
SeCoS		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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