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Datasheet 2N4427 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N4427 | HIGH FREQUENCY TRANSISTOR 2N4427
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON 4U
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C Total Device Dissipa | Motorola Semiconductors | transistor |
2 | 2N4427 | NPN SILICON HIGH FREQUENCY TRANSISTOR 2N4427
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
DESCRIPTION:
The ASI 2N4427 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.
MAXIMUM RATINGS
IC 400 mA
VCE 20 V
PDISS
3.5 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJ | ASI | transistor |
3 | 2N4427 | VHF OSCILLATOR POWER AMPLIFIER | STMicroelectronics | amplifier |
4 | 2N4427 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N4427
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50 | Microsemi Corporation | transistor |
5 | 2N4427 | Silicon planar epitaxial overlay transistors DISCRETE SEMICONDUCTORS
DATA SHEET
2N3866; 2N4427 Silicon planar epitaxial overlay transistors
Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27
Philips Semiconductors
Product specification
Silicon planar epitaxial overlay transistors
D | NXP Semiconductors | transistor |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo Unisonic Technologies mosfet | | |
2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee Texas transistor | | |
3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I Seme LAB data | | |
4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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