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Datasheet 2N4403 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N4403 | GENERAL PURPOSE TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
PNP Silicon
COLLECTOR 3
2N4402 2N4403*
*Motorola Preferred Device
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Co |  Motorola Semiconductors | transistor |
| 2 | 2N4403 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
TO-92 Plastic Package
2N4400, 2N4401 2N4402, 2N4403
2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
General Purpose Switching Applications
123
1 = EMITTER 2 = |  CDIL | transistor |
| 3 | 2N4403 | SILICON PNP TRANSISTORS 2N4402 2N4403
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4402 and 2N4403 are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N4400 and 2N4401.
MARKING: FULL PART NUMBE |  Central Semiconductor | transistor |
| 4 | 2N4403 | PNP switching transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N4403 PNP switching transistor
Product specification Supersedes data of 1997 May 05 1999 Apr 23
Philips Semiconductors
Product specification
PNP switching transistor
FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). |  NXP Semiconductors | transistor |
| 5 | 2N4403 | PNP General Purpose Amplifier 2N4403 / MMBT4403 — PNP General-Purpose Amplifier
2N4403 / MMBT4403 PNP General-Purpose Amplifier
Description
This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA.
July 2014
EBC
TO-92
Figure 1. 2N4403 Device Package
Ordering Information
P |  Fairchild Semiconductor | amplifier |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo  Unisonic Technologies mosfet | | |
| 2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee  Texas transistor | | |
| 3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I  Seme LAB data | | |
| 4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
| 5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
| 6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
| 7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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