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What is 2N4341?

This electronic component, produced by the manufacturer "Calogic LLC", performs the same function as "N-Channel JFET Low Noise Amplifier".


2N4341 Datasheet PDF - Calogic LLC

Part Number 2N4341
Description N-Channel JFET Low Noise Amplifier
Manufacturers Calogic LLC 
Logo Calogic  LLC Logo 


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N-Channel JFET
Low Noise Amplifier
CORPORATION
2N4338 – 2N4341
FEATURES
Exceptionally High Figure of Merit
Radiation Immunity
Extremely Low Noise and Capacitance
•• High Input Impedance
APPLICATIONS
Low-level Choppers
Data Switches
•• Multiplexers and Low Noise Amplifiers
PIN CONFIGURATION
TO-18
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +175oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package
Temperature Range
2N4338-41 Hermetic TO-18
-55oC to +175oC
X2N4338-41 Sorted Chips in Carriers -55oC to +175oC
5010
G,C
D
S
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
2N4338 2N4339 2N4340 2N4341
UNITS
MIN MAX MIN MAX MIN MAX MIN MAX
TEST CONDITIONS
IGSS Gate Reverse Current
-0.1 -0.1 -0.1 -0.1 nA
TA = 150oC
-0.1
-0.1
-0.1
VGS = -30V, VDS = 0
-0.1 µA
BVGSS
VGS(off)
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
-50 -50 -50 -50
-0.3 -1 -0.6 -1.8 -1 -3 -2 -6
V IG = -1µA, VDS = 0
VDS = 15V, ID = 0.1µA
ID(off)
Drain Cutoff Current
0.05
(-5)
0.05
(-5)
0.05
(-5)
0.07 nA VDS = 15V,
(-10) (V) VGS = ( )
IDSS Saturation Drain Current (Note 2)
0.2 0.6 0.5 1.5 1.2 3.6 3 9 mA VDS = 15V, VGS = 0
gfs
gos
Common-Source Forward
Transconductance (Note 2)
Common-Source Output Conductance
600 1800 800 2400 1300 3000 2000 4000
µS
5 15 30 60
VDS = 15V,
VGS = 0
f = 1kHz
rDS(on) Drain-Source ON Resistance
2500
1700
1500
800 ohm VDS = 0, IDS = 0
Ciss Common-Source Input Capacitance
Crss
Common-Source Reverse Transfer
Capacitance
7777
3
3
3
3
pF
VDS = 15V,
VGS = 0 (Note 1)
f = 1MHz
NF Noise Figure (Note 1)
VDS = 15V,
1
1
1
1
dB
VGS = 0
Rgen = 1meg,
f = 1kHz
BW = 200Hz
NOTES: 1. For design reference only, not 100% tested.
2. Pulse test duration 2ms (non-JEDEC Condition).


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