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2N3905 Datasheet PDF - Diotec Semiconductor

Part Number 2N3905
Description Si-Epitaxial PlanarTransistors
Manufacturers Diotec Semiconductor 
Logo Diotec Semiconductor Logo 



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2N3905 datasheet, circuit
2N3905, 2N3906
PNP
Version 2004-01-20
Standard Pinning
1=C 2=B 3=E
Si-Epitaxial PlanarTransistors
Switching Transistors
PNP
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak collector current – Kollektorspitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCE0
- VEB0
Ptot
- IC
- ICM
Tj
TS
Grenzwerte (TA = 25/C)
2N3905, 2N3906
40 V
40 V
5V
625 mW 1)
100 mA
200 mA
150/C
- 55…+ 150/C
Characteristics (Tj = 25/C)
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VCEsat
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VBEsat
- VBEsat
Collector cutoff current – Kollektorreststrom
- VCE = 30 V, - VEB = 3 V
- ICEV
Emitter cutoff current – Emitterreststrom
- VCE = 30 V, - VEB = 3 V
- IEBV
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 250 mV
– – 400 mV
– – 850 mV
– – 950 mV
– – 50 nA
– – 50 nA
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
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