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PDF AON6450 Data sheet ( Hoja de datos )

Número de pieza AON6450
Descripción N-Channel MOSFET
Fabricantes Freescale 
Logotipo Freescale Logotipo



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AON6450
100V N-Channel MOSFET
General Description
The AON6450 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well
suited for PWM, load switching and general purpose applications.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100V
52A
< 14.5m
< 17.5m
Top View
18
27
36
45
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±25
52
33
110
9
7
41
84
83
33
2.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14
40
1
Max
17
55
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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AON6450 pdf
AON6450
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
TA=25°C
50
40
30 TA=150°C
TA=100°C
20
10 TA=125°C
0
0.000001
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
60
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.0001
0.01
1
100 10000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.0001
PD
Single Pulse
Ton
T
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
1000
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