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PDF AON6242 Data sheet ( Hoja de datos )

Número de pieza AON6242
Descripción 60V N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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No Preview Available ! AON6242 Hoja de datos, Descripción, Manual

AON6242
60V N-Channel MOSFET
General Description
The AON6242 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
60V
85A
< 3.6m
< 4.5m
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
85
66
240
18.5
14.5
75
281
83
33
2.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14
40
1
Max
17
55
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: July 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

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AON6242 pdf
AON6242
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
TA=25°C
120
TA=100°C
80 TA=150°C
40
TA=125°C
0
1 10 100 1000
Time in avalanche, tA (us)
Figure 12: Single Pulse Avalanche capability (Note
C)
100
80
60
40
20
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
100 10000
TA=25°C
80 1000
60
100
40
10
20
0
0 25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.0001
0.01
1
100 10000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
100
1000
Rev 0: July 2011
www.aosmd.com
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Free Datasheet http://www.datasheet4u.com/

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