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Datasheet 2SC4177 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SC4177 | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SC4177
2SC4177 DFEATURES
TRANSISTOR (NPN )
TPower dissipation
.,LPCM:
0.15 W (Tamb=25℃)
1. 01 REF
0. 30 2. 00¡ À0. 05
Collector current
OICM: 0.1 A
Collector-base voltage
CV(BR)CBO: 60
V
1. 30¡ À0. 03
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150 |  WEJ | transistor |
| 2 | 2SC4177 | AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |  NEC | transistor |
| 3 | 2SC4177 | NPN Silicon Epitaxia SMD Type
NPN Silicon Epitaxia 2SC4177
Features
High dc current gain High voltage.
Transistors IC
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction tempera |  Kexin | transistor |
| 4 | 2SC4177 | NPN Plastic-Encapsulate Transistor 2SC4177
Elektronische Bauelemente 0.1A , 60V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-323
A
3 3
High DC Current Gain. High Voltage. Complementary to 2SA1611
1
L
Top View
2
C B
1 2
APPLICATIONS
K |  SeCoS | transistor |
| 5 | 2SC4177 | TRANSISTOR 2SC4177 TRANSISTOR (NPN)
FEATURES High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Volta |  Jin Yu Semiconductor | transistor |
2SC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SC0108T2Dx-xx | Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core 2SC0108T2Dx-xx Preliminary
2SC0108T2Dx-xx Description & Application Manual
Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core
Abstract
The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica  CT-Concept transistor | | |
| 2 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame  Panasonic Semiconductor transistor | | |
| 3 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame Panasonic Semiconductor transistor | | |
| 4 | 2SC100 | NPN Transistor w
w
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S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
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m o
w
w
w
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a
S a t
e e h
U 4 t
m o .c
 ETC transistor | | |
| 5 | 2SC1000 | (2SCxxx) Low Level and General Purpose Amplifiers w
w
w
.d
e e h s a t a
. u t4
m o c
 Micro Electronics transistor | | |
| 6 | 2SC1000 | Silicon NPN Epitaxial Transistor ETC transistor | | |
| 7 | 2SC1002 | Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1002
DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and sym  SavantIC transistor | |
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