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Datasheet 2SC3739 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SC3739 | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SC3739
2SC3739 TRANSISTOR (NPN)
FEATURES
Power dissipation
DPCM:
0.2 W (Tamb=25℃)
TCollector current
.,LICM: 0.5
Collector-base voltage
A
1. 9
0. 95¡ À0. 025
1. 02
0. 35 2. 92¡ À0. 05
V(BR)CBO:
60 V
Operating and storage junction temperature range
OTJ,Tstg: -55℃ to +150 |  WEJ | transistor |
| 2 | 2SC3739 | HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |  NEC | transistor |
| 3 | 2SC3739 | NPN Silicon Epitaxia SMD Type
NPN Silicon Epitaxia 2SC3739
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
High gain bandwidth product: fT=200MHz.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum |  Kexin | transistor |
| 4 | 2SC3739 | Transistor, NPN Silicon Type |  Renesas | transistor |
2SC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SC0108T2Dx-xx | Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core 2SC0108T2Dx-xx Preliminary
2SC0108T2Dx-xx Description & Application Manual
Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core
Abstract
The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica  CT-Concept transistor | | |
| 2 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame  Panasonic Semiconductor transistor | | |
| 3 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame Panasonic Semiconductor transistor | | |
| 4 | 2SC100 | NPN Transistor w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
 ETC transistor | | |
| 5 | 2SC1000 | (2SCxxx) Low Level and General Purpose Amplifiers w
w
w
.d
e e h s a t a
. u t4
m o c
 Micro Electronics transistor | | |
| 6 | 2SC1000 | Silicon NPN Epitaxial Transistor ETC transistor | | |
| 7 | 2SC1002 | Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1002
DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and sym  SavantIC transistor | |
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