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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3356
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.0 GHz
·High Power Gain
MAG = 13 dB TYP.
@VCE = 10 V, IC = 20 mA, f = 1.0 GHz
APPLICATIONS
·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO Emitter-Base Voltage
3.0 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
0.1 A
0.2 W
150 ℃
-65~150
℃
isc Website:www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
S-PARAMETER
VCE = 10 V, IC = 20 mA
Freque.
S11
GHz
MAG
ANG
0.2 0.45 -70.42
0.4 0.4 -177.3
0.6 0.41 150.4
0.8 0.41 126.3
1 0.42 104.6
1.2 0.42 85.22
1.4 0.42 65.91
1.6 0.42 47.16
1.8 0.41 27.84
0.2 0.45 -70.42
S21
MAG
ANG
16.73
150.2
9.3 94.32
6.2 72.41
4.69 55.83
3.75 40.65
3.17 26.22
2.74 13.54
2.4 1.03
2.13 -12.34
16.73
150.2
VCE = 10 V, IC = 5 mA
Freque.
S11
GHz
MAG
ANG
0.2 0.77 -3.8
0.4 0.62 -112.9
0.6 0.52 -174.9
0.8 0.49 150
1 0.48 122.4
1.2 0.48 99.54
1.4 0.48 78.4
1.6 0.48 58
1.8 0.47 37.79
0.2 0.46 17.69
S21
MAG
ANG
6.78 -177.5
6.04 117.8
4.82 83
3.81 61.86
3.09 43.61
2.64 27.16
2.27 13.76
1.97 0.66
1.75 -13.71
1.66 -25.39
isc Website:www.iscsemi.cn
isc RF Product Specification
2SC3356
S12
MAG
ANG
0.04 89.27
0.06 65.65
0.07 55.63
0.1 47.91
0.12 38.96
0.14 30.11
0.17 21.39
0.2 12.16
0.22 2.27
0.04 89.27
S22
MAG
ANG
0.42 -12.05
0.21 -53.52
0.17 -76.62
0.17 -97.1
0.17 -119
0.17 -138.9
0.18 -158.9
0.19 -177.5
0.21 164.93
0.42 -12.05
S12
MAG
ANG
0.06 99.12
0.08 50.85
0.09 36.61
0.1 30.36
0.11 24.14
0.12 18.43
0.14 13.12
0.17 6.97
0.18 0.2
0.2 -9.01
S22
MAG
ANG
0.8 6.86
0.44 -48.92
0.35 -73.18
0.32 -93.35
0.31 -113.7
0.31 -133.2
0.32 -153.3
0.32 -172.6
0.34 168.78
0.36 150.36
Free Datasheet http://www.datasheet4u.com/