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PDF 2SB1424 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1424 | |
| Descripción | Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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1. 2SB1424  Hay una vista previa y un enlace de descarga de 2SB1424 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SMD Type
Low VCE(sat) Transistor
2SB1424
Features
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A)
Excellent DC current gain characteristics.
PNP silicon transistor
Transistors
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
* Single pulse Pw=10ms.
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
VCBO
VCEO
VEBO
IC
ICP *
PC
Tj
Tstg
Rating
-20
-20
-6
-3
-5
0.5
150
-55 to +150
Unit
V
V
V
A
A
W
Symbol
Testconditons
VCBO IC= -50ìA
VCEO IC= -1mA
VEBO IE= -50ìA
IcBO VCB= -20V
IEBO VEB= -5V
hFE VCE=-2V, IC= -0.1A
VCE(sat) IC/IB= -2A/ -0.1A
Cob VCB= -10V, IE=0A, f=1MHz
fT VCE= -2V, IE=0.5A, f=100MHz
Min Typ Max Unit
-20 V
-20 V
-6 V
-0.1 A
-0.1 A
120 390
-0.5 V
35 pF
240 MHz
hFE Classification
Marking
Rank
hFE
AEQ
Q
120 270
AER
R
180 390
www.kexin.com.cn 1
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB1424.PDF ] | |
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