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Datasheet 2SB1197K Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SB1197K | Silicon PNP transistor 2SB1197K
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
饱和压降低,可与 2SD1781K 互补。 Low VCE(sat),complements the 2SD1781K.
用途 / Applications 用于一般低� | BLUE ROCKET ELECTRONICS | transistor |
2 | 2SB1197K | Low Frequency Transistor | ROHM Semiconductor | transistor |
3 | 2SB1197K | PNP General Purpose Transistors
2SB1197K
PNP
3 2 1
SC-59
V CEO
Value -32 -40 -5 -800
200 1.6 625
2SB1197K=AHR
-1.0 -50 -50
-32 -40 -5.0 -0.5 -0.5 u u
-20 -4.0
WEITRON
http://www.weitron.com.tw
2SB1197K
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min | Weitron Technology | transistor |
4 | 2SB1197K | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
SOT-23-3L Plastic-Encapsulated Transistors 2SB1197K TRANSISTOR (PNP)
FEATURES Power dissipation PCM: 200 mW (Tamb=25℃)
SOT-23-3L
1. BASE 2. EMITTER 3. COLLECTOR
1. 02
Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage ju | TRANSYS | transistor |
5 | 2SB1197K | Low Frequency Transistor SMD Type
Low Frequency Transistor 2SB1197K
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Features
Low VCE(sat).VCE(sat) IC = -0.8A.
+0.1 2.4-0.1
Unit: mm
PNP silicon transistor
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
-0.5V
IC / IB= -0.5A / -50mA
.
3
+0.05 0.1-0.01
+0.1 0.9 | Kexin | transistor |
2SB Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur Silan Microelectronics transistor | | |
2 | 2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H Silan Microelectronics transistor | | |
3 | 2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su Silan Microelectronics transistor | | |
4 | 2SB0709A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and th Panasonic Semiconductor transistor | | |
5 | 2SB0710 | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
6 | 2SB0710A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
7 | 2SB0766 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | |
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