29F512 Datasheet PDF - Eon Silicon Solution
Part Number | 29F512 | |
Description | EN29F512 | |
Manufacturers | Eon Silicon Solution | |
Logo | ||
There is a preview and 29F512 download ( pdf file ) link at the bottom of this page. Total 35 Pages |
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512 Kbit (64K x 8-bit) 5V Flash Memory
EN29F512
FEATURES
• 5.0V operation for read/write/erase
operations
• Fast Read Access Time
- 45ns, 55ns, 70ns, and 90ns
• Sector Architecture:
- 4 uniform sectors of 16Kbytes each
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent
program or erase operations within
individual sectors
• High performance program/erase speed
- Byte program time: 7µs typical
- Sector erase time: 300ms typical
- Chip erase time: 1.5s typical
• Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
• Low Power Active Current
- 12mA typical active read current
- 30mA program/erase current
• JEDEC Standard program and erase
commands
• JEDEC standard DATA polling and toggle
bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• 0.23 µm triple-metal double-poly
triple-well CMOS Flash Technology
• Low Vcc write inhibit < 3.2V
• 100K endurance cycle
• Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin 8mm x 20mm TSOP (Type 1)
- 32-pin 8mm x 14mm TSOP (Type 1)
• Commercial and Industrial Temperature
Ranges
GENERAL DESCRIPTION
The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized
into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of
16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5.0V
voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT
states in high-performance microprocessor systems.
The EN29F512 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable ( W E )
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
Free Datasheet http://www.datasheet4u.com/
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EN29F512
TABLE 3. OPERATING MODES
512K FLASH USER MODE TABLE
USER MODE
C E WE OE A9 A8 A6 A1 A0 Ax/y
DQ(0-7)
STANDBY
READ
OUTPUT DISABLE
READ
MANUFACTURE ID
READ DEVICE ID
VERIFY SECTOR
PROTECTION
SECTOR
PROTECTION
VERIFY SECTOR
UNPROTECTION
SECTOR
UNPROTECTION
WRITE
HXXXXXXXX
HI-Z
L H L A9 A8 A6 A1 A0 Ax/y
DQ (0-7)
L H H X X X X X Ax/y
HI-Z
L H L VID L/H L L L X MANUFACTURE
ID
L H L VID X L L H X
DEVICE ID
L H L VID X L H L X
CODE
L Pulse VID VID
X
L
X
X
X
L
L H L VID X H H L X
X
CODE
L Pulse VID VID
X
H
H
L
X
L
L L H A9 A8 A6 A1 A0 Ax/y
X
DIN (0-7)
NOTES:
1) L = VIL, H = VIH, VID = 11.0V ± 0.5V
2) X = Don’t care, either VIH or VIL
3) Ax/y: Ax = Addr(x), Ay = Addr(y)
TABLE 4. DEVICE IDENTIFICTION
512K FLASH MANUFACTURER/DEVICE ID TABLE
A8 A6 A1 A0
READ
MANUFACTURER ID
READ
DEVICE ID
H(1)
X(2)
L
L
LL
LH
DQ(7-0)
HEX
MANUFACTURER ID
1C
DEVICE ID
21
NOTES:
1) If a Manufacturing ID is read with A8 = L, the chip will output a configuration code 7Fh. A further
Manufacturing ID must be read with A8 = H.
2) X = Don’t care
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
Free Datasheet http://www.datasheet4u.com/
Preview 5 Page |
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Information | Total 35 Pages | |
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