2SA1338 Datasheet PDF - Kexin
| Part Number | 2SA1338 | |
| Description | PNP Epitaxial Planar Silicon Transistors | |
| Manufacturers | Kexin | |
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SMD Type
TransistIoCrs
PNP Epitaxial Planar Silicon Transistors
Features
Adoption of FBET process.
High breakdown voltage : VCEO=-50V.
Large current capacitiy and high fT.
Ultrasmall-sized package permitting sets
to be smallsized, slim.
2SA1338
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-60
-50
-5
-500
-800
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Common base output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Turn-on time
Storage time
Fall time
Symbol
Testconditons
IcBO VCB = -40V , IE = 0
IEBO VEB = -4V , IC = 0
hFE VCE = -5V , IC = -10mA
fT VCE = -10V , IC = -50mA
Cob VCB = -10V , f = 1MHz
VCE(sat) IC = -100mA , IB =-10mA
VBE(sat) IC = -100mA , IB =-10mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -100ìA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
ton
tstg VCC = 20V, IC = -10IB1 = -10IB2 = 100mA
tf
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
100 560
200 MHz
5.6 pF
0.15 0.4 V
0.8 1.2 V
-60 V
-50 V
-5 V
70 ns
400 ns
50 ns
hFE Classification
Marking
Rank
hFE
4
100 200
AL
5
140 280
6
200 400
7
280 560
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SA1338 electronic component. |
| Information | Total 1 Pages | |
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