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PDF 2SJ676 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ676 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SJ676
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOS V)
2SJ676
Switching Regulator, DC/DC Converter and
Motor Drive Applications
Unit: mm
z Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)
z High forward transfer admittance: |Yfs| = 2.0 S (typ.)
z Low leakage current: IDSS = −100 μA (max) (VDS = −200 V)
z Enhancement mode: Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
−200
−200
±20
−2.5
−10
1.3
191
−2.5
0.13
150
−55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (ch−a)
96.1 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 48.6 mH, RG = 25 Ω, IAR = −2.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-09-29
Free Datasheet http://www.datasheet4u.com/
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