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2N339 Datasheet PDF - Fairchild Semiconductor

Part Number 2N339
Description NPN General Purpose Amplifier
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 



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2N339 datasheet, circuit
2N3390
2N3391
2N3391A
2N3392
2N3393
Discrete POWER & Signal
Technologies
B
CE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
25
VCBO
Collector-Base Voltage
25
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N3390 / 3391/A / 3392 / 3393
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
3390-93, Rev B

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