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What is IKA10N60T?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "IGBT ( Insulated Gate Bipolar Transistor )".


IKA10N60T Datasheet PDF - Infineon

Part Number IKA10N60T
Description IGBT ( Insulated Gate Bipolar Transistor )
Manufacturers Infineon 
Logo Infineon Logo 


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TrenchStop Series
IKA10N60T
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time – 5µs
Designed for :
G
E
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt
P-TO-220-3-31
(TO-220 FullPak)
Type
IKA10N60T
VCE
600V
IC VCE(sat),Tj=25°C Tj,max Marking Code Package
Ordering Code
10A
1.5V
175°C
K10T60
TO-220-FP Q67040S4683
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 400V, Tj 150°C
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Value
600
20
10
30
30
Unit
V
A
20
10
30
±20
5
30
-40...+175
-55...+175
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2 Oct-04
Free Datasheet http://www.datasheet4u.com/

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IKA10N60T equivalent
TrenchStop Series
IKA10N60T
30A
25A
20A
15A
VGE=20V
15V
12V
10V
8V
6V
10A
5A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
30A
25A
20A
VGE=20V
15V
12V
10V
15A 8V
6V
10A
5A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
5V
25A
20A
15A
10A
5A TJ=175°C
25°C
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3,0V
2,5V
IC=20A
2,0V
1,5V
1,0V
IC=10A
IC=5A
0,5V
0,0V
-50°C
0°C
50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2 Oct-04
Free Datasheet http://www.datasheet4u.com/


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IKA10N60T electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
IKA10N60TThe function is IGBT ( Insulated Gate Bipolar Transistor ). InfineonInfineon

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