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PDF APM2558NU Data sheet ( Hoja de datos )
| Número de pieza | APM2558NU | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics Coropration | |
| Logotipo |  |
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APM2558NU
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 25V/60A,
RDS(ON)=4.5mΩ (Typ.) @ VGS=10V
RDS(ON)=7.5mΩ (Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Avalanche Rated
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management in Desktop Computer or
DC/DC Converters
Ordering and Marking Information
GD
S
Top View of TO-252
D
G
S
N-Channel MOSFET
APM2558N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM2558N U : APM2558N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Dec., 2008
1
www.anpec.com.tw
This datasheet has been downloaded from http://www.digchip.com at thFriesepDaatgaesheet http://www.datasheet4u.com/
1 page  
APM2558NU
Typical Operating Characteristics (Cont.)
Output Characteristics
160
V = 5,6,7,8,9,10V
GS
140
4.5V
120
4V
100
80
3.5V
60
40
3V
20
2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
18
I =40A
DS
16
14
12
10
8
6
4
2
0
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Drain-Source On Resistance
14
12
10
V =4.5V
GS
8
6 V =10V
GS
4
2
0
0 20 40 60 80 100 120 140 160
ID - Drain Current (A)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Dec., 2008
5
www.anpec.com.tw
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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