2SA1972 Datasheet PDF - Toshiba Semiconductor
Part Number | 2SA1972 | |
Description | TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) | |
Manufacturers | Toshiba Semiconductor | |
Logo | ||
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1972
High-Voltage Switching Applications
2SA1972
Unit: mm
• High breakdown voltage: VCEO = −400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
−400
−400
−7
−0.5
−1
−0.25
900
150
−55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
Note1: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-21
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SA1972 electronic component. |
Information | Total 4 Pages | |
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Featured Datasheets
Part Number | Description | MFRS |
2SA1971 | The function is SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR. Toshiba Semiconductor | |
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