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What is 2SA1962?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR".


2SA1962 Datasheet PDF - Toshiba Semiconductor

Part Number 2SA1962
Description SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1962
Power Amplifier Applications
2SA1962
Unit: mm
High breakdown voltage: VCEO = 230 V (min)
Complementary to 2SC5242
Recommended for 80-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
−230
V
Collector-emitter voltage
V CEO
−230
V
Emitter-base voltage
VEBO −5 V
Collector current
IC −15 A
Base current
IB −1.5 A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
PC 130 W
Tj 150 °C
T stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2012-08-31


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2SA1962 datasheet


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