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RJP3063DPP Datasheet PDF - Renesas Technology

Part Number RJP3063DPP
Description IGBT
Manufacturers Renesas Technology 
Logo Renesas Technology Logo 



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RJP3063DPP datasheet, circuit
Merits
Power MOSFETs and IGBT for PDP
Power MOSFET
Low ON resistance
Low Qg
High avalanche tolerance
IGBT
Low VCE (sat)
High-speed switching
April 2010
Renesas Electronics
PDP System
Y
Sustain
circuit
Panel
Addressing IC
TV/PC
Signal
PDP
Signal
processing
X
Sustain
circuit
Timing
control
Power
supply
PDP trends
Power device
High Intensity
High breakdown
voltage
High pressure Gas
High Efficiency
Low resistance
High speed switching
Low Cost
Optimum FET
Wide MOSFET
line-ups
IGBT
High Speed IGBT
Product Lineup
Power MOSFET
P/N
H7N1005LS
H7N1004LS
H5N2301PF
H5N2306PF
H5N2305PF
H5N2509P
H5N2503P
H5N3004P
H5N3007LS
H5N3003P
H5N3504P
VDSS
(V)
100
100
230
230
230
250
250
300
300
300
350
Maximum Rating
ID
(A)
15
30
25
30
35
30
50
25
25
40
20
VGS
(V)
±20
±20
±30
±30
±30
±30
±30
±30
±30
±30
±30
Electrical Characteristics
VGS(off)
RDS(on)
typ(V)
typ(m
2.0 85
2.0 25
3.5 65
3.5 48
3.5 30
3.5 53
3.5 40
3.5 75
2.8 120
3.5 60
3.5 100
Package
LDPAK
LDPAK
TO-3PFM
TO-3PFM
TO-3PFM
TO-3PFM
TO-3P
TO-3P
LDPAK
TO-3P
TO-3P
IGBT (High-speed type)
P/N
GN4030V5AB
GN6030V5AB
RJP3053DPP
RJP3063DPP
RJP3054DPP
RJP3064DPP
RJP3055DPP
RJP3065DPP
RJP4065DPP
RJP2557DPK
RJP3056DPK
RJP3057DPK
RJP3066DPK
RJP3067DPK
RJP4067DPK
VCES
(V)
400
600
300
300
300
300
300
300
400
270
300
300
300
300
400
Maximum Rating
IC
(A)
30
30
30
30
35
35
40
40
40
50
45
50
45
50
50
VGE
(V)
±20
±20
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
Electrical Charcteristics
VCE(sat)
tf
(V) typ
(μS)  typ
1.5 0.12
1.7 0.12
2.0 0.15
1.7 0.30
1.8 0.15
1.5 0.30
1.8 0.15
1.5 0.3
1.6 0.3
1.6 0.15
1.6 0.15
1.6 0.15
1.4 0.3
1.4 0.3
1.7 0.35
Package
TO-220AB
TO-220AB
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
©2010. Renesas Electronics Corporation, All rights reserved.
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