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Número de pieza | UPA2811T1L | |
Descripción | MOS FIELD EFFECT TRANSISTOR | |
Fabricantes | Renesas | |
Logotipo | ||
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No Preview Available ! μ PA2811T1L
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0191EJ0100
Rev.1.00
Jan 11, 2011
Description
The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS −30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A)
• 4.5 V Gate-drive available
• Built-in gate protection diode
• Small & thin type surface mount package with heat spreader (8-pin HVSON)
• Halogen free and RoHS compliant
Ordering Information
Part No.
LEAD PLATING
PACKING
μ PA2811T1L-E1-AY ∗1
μ PA2811T1L-E2-AY ∗1
Pure Sn
Tape 3000 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Package
8-pin HVSON (3333)
typ. 0.028 g
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
−30
m25
m19
m76
1.5
3.8
52
150
−55 to +150
−19
36
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS0191EJ0100 Rev.1.00
Jan 11, 2011
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-30
VDS
-25
-20
VDD = -24 V
-15 V
-6 V
-12
VGS
-10
-8
-15 -6
-10 -4
-5 -2
ID = -19 A
00
0 5 10 15 20 25 30
QG - Gate Charge - nC
Chapter Title
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
-10 V
10 -4.5 V
VGS = 0 V
1
0.1
Pulsed
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
R07DS0191EJ0100 Rev.1.00
Jan 11, 2011
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet UPA2811T1L.PDF ] |
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UPA2811T1L | MOS FIELD EFFECT TRANSISTOR | Renesas |
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