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What is DMN32D2LDF?

This electronic component, produced by the manufacturer "Diodes", performs the same function as "COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR".


DMN32D2LDF Datasheet PDF - Diodes

Part Number DMN32D2LDF
Description COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Manufacturers Diodes 
Logo Diodes Logo 


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Features
Common Source Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Small Surface Mount Package
ESD Protected Gate
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q 101 Standards for High Reliability
DMN32D2LDF
COMMON SOURCE DUAL N-CHANNEL
ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Mechanical Data
Case: SOT-353
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
SOT-353
G2 S G1
G2 S G1
Q1 Q2
ESD PROTECTED
TOP VIEW
BOTTOM VIEW
Maximum Ratings Q1, Q2 @TA = 25°C unless otherwise specified
D2 D1
TOP VIEW
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Symbol
VDSS
VGSS
ID
D2 D1
Schematic Diagram
Value
30
±10
400
Unit
V
V
mA
Thermal Characteristics Q1, Q2 @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
PD
RθJA
Tj, TSTG
280
446
-55 to +150
mW
°C/W
°C
Electrical Characteristics Q1, Q2 @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Symbol Min Typ Max Unit
Test Condition
@ TC = 25°C
BVDSS
IDSS
IGSS
30
⎯ ⎯ V VGS = 0V, ID = 250μA
1 μA VDS = 30V, VGS = 0V
±10
±1
μA VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
VGS(th)
0.6
1.2
V VDS = VGS, ID = 250μA
⎯ ⎯ 2.2
VGS = 1.8V, ID = 20mA
RDS (ON)
1.5
1.2
Ω VGS = 2.5V, ID = 20mA
VGS = 4.0V, ID = 100mA
|Yfs| 100
mS VDS =10V, ID = 0.1A
VSD 0.5 1.4 V VGS = 0V, IS = 115mA
Ciss
Coss
39
10
pF
pF
VDS = 3V, VGS = 0V
f = 1.0MHz
Crss
3.6
pF
Turn-on Time ton 11 nS VDD = 5V, ID = 10 mA,
Turn-off Time toff 51 nS VGS = 0-5V
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
1 of 4
www.diodes.com
January 2008
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/


Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
DMN32D2LDFThe function is COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR. DiodesDiodes

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