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PDF AUIRFR4615 Data sheet ( Hoja de datos )

Número de pieza AUIRFR4615
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! AUIRFR4615 Hoja de datos, Descripción, Manual

AUTOMOTIVE GRADE
PD -96398A
AUIRFR4615
Features
l Advanced Process Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRFU4615
HEXFET® Power MOSFET
D VDSS
150V
RDS(on) typ.
34m:
:G max. 42m
S ID
33A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
DD
G
Gate
S
G
DPak
AUIRFR4615
S
GD
IPAK
AUIRFU4615
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
33
24 A
140
144 W
Linear Derating Factor
0.96 W/°C
VGS
EAS (Thermally limited)
IAR
EAR
dv/dt
dGate-to-Source Voltage
Single Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery
± 20
109
See Fig. 14, 15, 22a, 22b,
38
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300(1.6mm from case)
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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AUIRFR4615 pdf
1000
100
TJ = 175°C
10
TJ = 25°C
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
3.0
175
2.5
2.0
1.5
1.0
0.5
0.0
-20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
1000
100
10
AUIRFR/U4615
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
190
185 Id = 5mA
180
175
170
165
160
155
150
145
140
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
500
450 ID
TOP
2.8A
400 5.3A
350 BOTTOM 21A
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
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AUIRFR4615 arduino
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
AUIRFR/U4615
TR
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
www.irf.com
11
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