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PDF AUIRFR4105 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFR4105 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AUIRFR4105 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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Features
● Advanced Planar Technology
● Low On-Resistance
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Repetitive Avalanche Allowed
up toTjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
AUTOMOTIVEGRADE
PD - 97597A
AUIRFR4105
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max.
45mΩ
gG
ID (Silicon Limited)
27A
S ID (Package Limited)
20A
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
Gate
S
G
D-Pak
AUIRFR4105
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
ÃAvalanche Current
Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
hRθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB mount) **
RθJA
Junction-to-Ambient
Max.
27g
19
20
100
68
0.45
± 20
65
16
6.8
5.0
-55 to + 175
300
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datashe0et7h/0tt5p/:1/1/www.datasheet4u.com/
1 page  
AUIRFR4105
1200
1000
800
600
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Ciss Coss = Cds + Cgd
Coss
400
Crss
200
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
20 I D = 16A
16
VDS = 44V
VDS = 28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
TJ = 175°C
TJ = 25°C
10
1 VGS = 0V A
0.4 0.8 1.2 1.6 2.0
VSD , Source-to-Drain Voltage (V)
100
10μs
100μs
10
1ms
STTCJing==le
25°C
175°C
Pulse
1
1 10
VDS , Drain-to-Source Voltage (V)
A
100
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
AUIRFR4105
Ordering Information
Base part
number
AUIRFR4105
Package Type Standard Pack
Dpak
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
Complete Part
Number
AUIRFR4105
AUIRFR4105TR
AUIRFR4105TRL
AUIRFR4105TRR
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRFR4105.PDF ] | |
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