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PDF AUIRFR120Z Data sheet ( Hoja de datos )
| Número de pieza | AUIRFR120Z | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96345
AUIRFR120Z
AUTOMOTIVE MOSFET
AUIRFU120Z
Features
l Advanced Process Technology
HEXFET® Power MOSFET
D V(BR)DSS
100V
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
RDS(on) typ. 150mΩ
G max. 190mΩ
S ID
8.7A
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
DD
S
GD
D-Pak
AUIRFR120Z
G
Gate
D
Drain
S
GD
I-Pak
AUIRFU120Z
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
8.7
6.1 A
35
35 W
0.23 W/°C
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy(Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
± 20
18
20
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
––– 4.28
––– 50 °C/W
––– 110
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/06/10
Free Datasheet http://www.datasheet4u.com/
1 page  
AUIRFR/U120Z
500
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
400
Crss = Cgd
Coss = Cds + Cgd
Ciss
300
200
100
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID= 5.2A
16
12
VDS= 80V
VDS= 50V
VDS= 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 2 4 6 8 10
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
10.0
TJ = 175°C
1.0
TJ = 25°C
0.1
0.0
VGS = 0V
0.5 1.0
VSD, Source-toDrain Voltage (V)
1.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
Tc = 25°C
Tj = 175°C
0.1 Single Pulse
1 10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
AUIRFR/U120Z
I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
IR Logo
AUFU120Z
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet AUIRFR120Z.PDF ] | |
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