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PDF AUIRFR1010Z Data sheet ( Hoja de datos )
| Número de pieza | AUIRFR1010Z | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97683
AUIRFR1010Z
Features
● Advanced Process Technology
● Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
G
HEXFET® Power MOSFET
D VDSS
55V
RDS(on) typ.
5.8mΩ
max. 7.5mΩ
ID (Silicon Limited)
91A
S ID (Package Limited) 42A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Gate
D
S
G
D-Pak
AUIRFR1010Z
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
91
65
42
360
140
Units
A
W
VGS
EAS
EAS (tested )
IAR
EAR
TJ
TSTG
Linear Derating Factor
dGate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
0.9
± 20
110
220
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
300
Typ.
–––
–––
–––
Max.
1.11
40
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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1 page  
AUIRFR1010Z
5000
4000
3000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
20
ID= 42A
16
12
VDS= 44V
VDS= 28V
VDS= 11V
8
4
0
0 20 40 60 80 100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
1.00
TJ = 25°C
VGS = 0V
0.10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100μsec
10 1msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10msec
DC
10
VDS , Drain-toSource Voltage (V)
100
nce
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
www.irf.com
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AUIRFR1010Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRFR1010Z.PDF ] | |
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