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PDF AUIRFP2907Z Data sheet ( Hoja de datos )
| Número de pieza | AUIRFP2907Z | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97550
AUIRFP2907Z
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
G
D
S
G
Gate
V(BR)DSS
RDS(on) max.
ID
75V
4.5mΩ
170A
D
S
D
G
TO-247AC
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
170 A
120
680
310 W
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
2.0
± 20
520
690
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
RθJC
RθCS
RθJA
jJunction-to-Case
Parameter
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.49
–––
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/13/2010
Free Datasheet http://www.datasheet4u.com/
1 page  
AUIRFP2907Z
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
12.0
ID= 90A
10.0
VDS= 60V
VDS= 38V
8.0 VDS= 15V
6.0
4.0
2.0
0.0
0
50 100 150
QG Total Gate Charge (nC)
200
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
TJ = 175°C
100
10 TJ = 25°C
1
0.0
VGS = 0V
0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
2.5
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
nce
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
AUIRFP2907Z
Ordering Information
Base part Package Type
AUIRFP2907Z
TO-247
Standard Pack
Form
Tube
Complete Part Number
Quantity
25 AUIRFP2907Z
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRFP2907Z.PDF ] | |
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