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PDF AUIRFB8407 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFB8407 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
AUIRFB8407
AUIRFS8407
AUIRFSL8407
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
G
HEXFET® Power MOSFET
D VDSS
40V
RDS(on)
typ. 1.4mΩ
(SMD version) max 1.8mΩ
cID (Silicon Limited) 250A
S ID (Package Limited) 195A
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
D
DD
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other
DS
G
S
G
DS
G
applications.
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l DC-DC Applications
Ordering Information
TO-220AB
AUIRFB8407
G
G a te
D2Pak
AUIRFS8407
D
Drain
TO-262
AUIRFSL8407
S
Source
Base part number
Package Type
Standard Pack
Complete Part
Form
Quantity
Number
AUIRFB8407
TO-220
Tube
50 AUIRFB8407
AUIRFSL8407
TO-262
Tube
50 AUIRFSL8407
AUIRFS8407
D2Pak
Tube
50 AUIRFS8407
AUIRFS8407
D2Pak
Tape and Reel Left
800 AUIRFS8407TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
250
Units
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
dContinuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
180
195
l1000
A
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
230 W
1.5 W/°C
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
± 20
-55 to + 175
300
x x10lbf in (1.1N m)
V
°C
Avalanche Characteristics
EAS (Thermally limited)
EAS (tested)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃeSingle Pulse Avalanche Energy Tested Value
ÃdAvalanche Current
dRepetitive Avalanche Energy
350
500
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
April 25, 2013
Free Datasheet http://www.datasheet4u.com/
1 page  
1000
100 TJ = 175°C
10 TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
250
LIMITED BY PACKAGE
2.5
200
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10 20 30 40
VDS, Drain-to-Source Voltage (V)
50
Fig 11. Typical COSS Stored Energy
5 www.irf.com © 2013 International Rectifier
AUIRFB/S/SL8407
1000
100μsec
100 1msec
Limited by Package
10 10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
DC
10
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
50
Id = 1.0mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP 22A
46A
BOTTOM 100A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 25, 2013
Free Datasheet http://www.datasheet4u.com/
5 Page 
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
AUIRFB/S/SL8407
TO-262 Part Marking Information
Part Number
IR Logo
AUIRFSL8407
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier
April 25, 2013
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
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| PDF Descargar | [ Datasheet AUIRFB8407.PDF ] | |
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